JPH0157508B2 - - Google Patents

Info

Publication number
JPH0157508B2
JPH0157508B2 JP5124082A JP5124082A JPH0157508B2 JP H0157508 B2 JPH0157508 B2 JP H0157508B2 JP 5124082 A JP5124082 A JP 5124082A JP 5124082 A JP5124082 A JP 5124082A JP H0157508 B2 JPH0157508 B2 JP H0157508B2
Authority
JP
Japan
Prior art keywords
misfetq
circuit
voltage
film
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5124082A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57193066A (en
Inventor
Minoru Fukuda
Shigeru Yamatani
Kotaro Nishimura
Akira Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57051240A priority Critical patent/JPS57193066A/ja
Publication of JPS57193066A publication Critical patent/JPS57193066A/ja
Publication of JPH0157508B2 publication Critical patent/JPH0157508B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP57051240A 1982-03-31 1982-03-31 Eprom device Granted JPS57193066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57051240A JPS57193066A (en) 1982-03-31 1982-03-31 Eprom device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051240A JPS57193066A (en) 1982-03-31 1982-03-31 Eprom device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP7651981A Division JPS57192067A (en) 1981-05-22 1981-05-22 Erasable and programmable read only memory unit

Publications (2)

Publication Number Publication Date
JPS57193066A JPS57193066A (en) 1982-11-27
JPH0157508B2 true JPH0157508B2 (en]) 1989-12-06

Family

ID=12881416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051240A Granted JPS57193066A (en) 1982-03-31 1982-03-31 Eprom device

Country Status (1)

Country Link
JP (1) JPS57193066A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715798B2 (ja) * 1983-02-23 1995-02-22 株式会社東芝 半導体記憶装置
US4566080A (en) * 1983-07-11 1986-01-21 Signetics Corporation Byte wide EEPROM with individual write circuits
JPH0666116B2 (ja) * 1983-09-28 1994-08-24 株式会社日立製作所 半導体記憶装置
JPH0793037B2 (ja) * 1988-11-21 1995-10-09 三菱電機株式会社 半導体記憶装置
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture

Also Published As

Publication number Publication date
JPS57193066A (en) 1982-11-27

Similar Documents

Publication Publication Date Title
US5300802A (en) Semiconductor integrated circuit device having single-element type non-volatile memory elements
US4742492A (en) EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US4258378A (en) Electrically alterable floating gate memory with self-aligned low-threshold series enhancement transistor
KR960016803B1 (ko) 불휘발성 반도체 메모리장치
US4122544A (en) Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US5504706A (en) Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells
US5338953A (en) Electrically erasable and programmable semiconductor memory device with trench memory transistor and manufacturing method of the same
US5557569A (en) Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
US4686558A (en) CMOS memory cell having an electrically floating storage gate
US5153144A (en) Method of making tunnel EEPROM
JPH0219980B2 (en])
US4365263A (en) Semiconductor integrated circuit device composed of insulated gate field-effect transistor
GB2081012A (en) Nonvolatile semiconductor memory device and a method for manufacturing the same
US4458348A (en) Electrically programmable read only memory having reduced leakage current
US4972371A (en) Semiconductor memory device
US4988635A (en) Method of manufacturing non-volatile semiconductor memory device
US5340760A (en) Method of manufacturing EEPROM memory device
US5602048A (en) Semiconductor integrated circuit device and method of manufacturing the same
US4503524A (en) Electrically erasable dual-injector floating gate programmable memory device
US4183093A (en) Semiconductor integrated circuit device composed of insulated gate field-effect transistor
US6696723B2 (en) Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process
KR100234414B1 (ko) 불휘발성 메모리장치 및 그 제조방법
US6335549B1 (en) EEPROM with high channel hot carrier injection efficiency
US6717204B1 (en) Semiconductor devices having a non-volatile memory transistor
JPH0157508B2 (en])